hsm p-380 0 features low curre nt s w itc hing low dist ortion att enuating ultra-lo w dist ortion sw itc hing absolute m axim um ratings t a = 25 param eter sym bol rating unit continuo us reverse voltage v r 100 v forw ard curre nt (1 m s pulse) i f 1 a pow er dissi pation @ t a = 25 p tot 250 m w junct ion tem pera ture t j 150 storage tem pera ture rang e t stg -65 to +150 electrical character istics t a = 25 param eter sym bol test c onditons min typ ma x unit rev erse voltage v r i r = 10 a 100 v series resi st ance r s i f =100m a,f =100m hz 2.0 total capacit ance c t v r =50v,f=1mhz 0.4 pf mark ing mar king d0 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1 2 3 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
t y pical ch aracteristics 3000 1000 100 10 1 0.01 0.1 1 10 100 rf resistance (ohms) i f ?forward bias current (ma) t a = +85 c t a = +25 c t a = 55 c figure 1. rf resistance vs forward bias current 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1020304050 v r ?reverse voltage (v) capacitance (pf) figure 2. capacitance vs reverse voltage. 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 i f ?forward current (ma) v f ?forward voltage (ma) figure 3. forward current vs forward voltage. 125 c 25 c ?0 c hsm p-380 0 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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